Adsorption induced reconstruction of the Cu(110) surface

The formation of the O/Cu(110)-(2 × 1) and H/Cu(110)-(1 × 2) superstructures has been investigated by a LEED beam profile analysis. The oxygen induced reconstruction proceeds at later stages by creation of holes on flat terraces. This could not be observed at the hydrogen induced missing row reconstruction. The formation of the missing row structure proceeds most probably via nucleation at steps and subsequent growth of (1 × 2) islands. The influence of different distributions of steps and islands on beam profiles is discussed

Ptychographic X-ray computed tomography of extended colloidal networks in food emulsions

As a main structural level in colloidal food materials, extended colloidal networks are important for texture and rheology. By obtaining the 3D microstructure of the network, macroscopic mechanical properties of the material can be inferred. However, this approach is hampered by the lack of suitable non-destructive 3D imaging techniques with submicron resolution. We present results of quantitative ptychographic X-ray computed tomography applied to a palm kernel oil based oil-in-water emulsion. The measurements were carried out at ambient pressure and temperature. The 3D structure of the extended colloidal network of fat globules was obtained with a resolution of around 300 nm. Through image analysis of the network structure, the fat globule size distribution was computed and compared to previous findings. In further support, the reconstructed electron density values were within 4% of reference values.Comment: 19 pages, 4 figures, to be published in Food Structur

Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system with uniformly transparent interfaces [9] and a hard induced gap, indicted by strongly suppressed sub gap tunneling conductance [10]. Here we report the realization of a two-dimensional (2D) InAs/InGaAs heterostructure with epitaxial Al, yielding a planar S-Sm system with structural and transport characteristics as good as the epitaxial wires. The realization of 2D epitaxial S-Sm systems represent a significant advance over wires, allowing extended networks via top-down processing. Among numerous potential applications, this new material system can serve as a platform for complex networks of topological superconductors with gate-controlled Majorana zero modes [1-4]. We demonstrate gateable Josephson junctions and a highly transparent 2D S-Sm interface based on the product of excess current and normal state resistance

Ag on Ge(111): 2D X-ray structure analysis of the (Wurzel)3 x (Wurzel)3 superstructure

We have studied the Ag/Ge(111)(Wurzel)3 x (Wurzel)3 superstructure by grazing-incidence X-ray diffraction. In our structural analysis we find striking similarities to the geometry of Au on Si(111). The Ag atoms form trimer clusters with an Ag-Ag distance of 2.94+-0.04°A with the centers of the trimers being located at the origins of the (Wurzel)3 x (Wurzel)3 lattice. The Ag layer is incomplete and at least one substrate layer is distorted

The Ge(001) (2 × 1) reconstruction: asymmetric dimers and multilayer relaxation observed by grazing incidence X-ray diffraction

Grazing incidence X-ray diffraction has been used to analyze in detail the atomic structure of the (2 × 1) reconstruction of the Ge(001) surface involving far reaching subsurface relaxations. Two kinds of disorder models, a statistical and a dynamical were taken into account for the data analysis, both indicating substantial disorder along the surface normal. This can only be correlated to asymmetric dimers. Considering a statistical disorder model assuming randomly oriented dimers the analysis of 13 symmetrically independent in-plane fractional order reflections and of four fractional order reciprocal lattice rods up to the maximum attainable momentum transfer qz = 3c* (c* = 1.77 × 10−1 Å−1) indicates the formation of asymmetric dimers characterized by R>D = 2.46(5) Å as compared to the bulk bonding length of R = 2.45 Å. The dimer height of Δ Z = 0.74(15) Å corresponds to a dimer buckling angle of 17(4)°. The data refinement using anisotropic thermal parameters leads to a bonding length of RD = 2.44(4) Å and to a large anisotropy of the root mean-square vibration amplitudes of the dimer atoms (u112) 1/2 = 0.25 Å, (u222)1/2 = 0.14 Å, (u332)1/2 = 0.50 Å). We have evidence for lateral and vertical disp tenth layer below the surface

Phase transitions in two dimensions - the case of Sn adsorbed on Ge(111) surfaces

Accurate atomic coordinates of the room-temperature (root3xroot3)R30degree and low-temperature (3x3) phases of 1/3 ML Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T4-sites in the (root3xroot3)R30degree structure. In the low temperature phase one of the three Sn atoms per (3x3) unit cell is displaced outwards by 0.26 +/- 0.04 A relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.Comment: RevTeX, 5 pages including 2 figure